HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, D2PAK, TO-220AB, TO220-FPAB and I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applica

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY GP 200V 8A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, D2PAK, TO-220AB, TO220-FPAB and I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applica

Automotive high efficiency ultrafast diode

Description Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in DPAK and D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. Features

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 200V 8A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp