Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Analog Video, RG59, #20 Solid BCCS, 95 BC Braid, PE Jacket

Product Description 20 AWG solid .032 bare copper-covered steel conductor, foam polyethylene insulation, bare copper braid shield (95 coverage), polyethylene jacket.

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

Description The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

INSULATED RING TONGUE TERMINAL

文件：79.62 Kbytes Page：1 Pages

DC axial fans

文件：197.7 Kbytes Page：1 Pages

High Voltage Current Shunt Monitor

文件：386.02 Kbytes Page：16 Pages