P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel E nhancement Mode Field Effect Transistor

10-bit 50MSPS RGB 3-channel D/A Converter

Description The CXD2307R is a 10-bit high-speed D/A converter for video band, featuring RGB 3-channel I/O. This is ideal for use in high-definition TVs and high-resolution displays. Features • Resolution 10-bit • Maximum conversion speed 50MSPS • RGB 3-channel I/O • Differentia

10-bit 50MSPS RGB 3-channel D/A Converter

Description The CXD2307R is a 10-bit high-speed D/A converter for video band, featuring RGB 3-channel I/O. This is ideal for use in high-definition TVs and high-resolution displays. Features • Resolution 10-bit • Maximum conversion speed 50MSPS • RGB 3-channel I/O • Differentia

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica