N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

Mosfets

S uper high dense cell design for low R DS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

S uper high dense cell design for low R DS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

Mosfets

Mosfets

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages