Automotive 650 V power Schottky silicon carbide diode

Features  AEC-Q101 qualified  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  High forward surge capability  ECOPACK®2 compliant component  PPAP capable  Operating Tj from -40 °C to 175 °C

汽车用650 V、20 A碳化硅功率肖特基二极管

Automotive 650 V power Schottky silicon carbide diode

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650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Automotive 650 V power Schottky silicon carbide diode

Features  AEC-Q101 qualified  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  High forward surge capability  ECOPACK®2 compliant component  PPAP capable  Operating Tj from -40 °C to 175 °C

650 V, dual 10 A, power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Low Forward voltage drop • Operating Tj from -40 °C to +175 °C • ECOPACK2 compliant component • Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Silicon Carbide Schottky Diode

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Enhanced surge capability

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