High voltage power Schottky rectifier

Features  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Low thermal resistance  Avalanche capability specified  High frequency operation  ECOPACK®2 compliant component

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：90.52 Kbytes Page：6 Pages

170 V、60 A双路功率肖特基整流器

High voltage power Schottky rectifier

Features  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Low thermal resistance  Avalanche capability specified  High frequency operation  ECOPACK®2 compliant component

High voltage power Schottky rectifier

Features  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Low thermal resistance  Avalanche capability specified  High frequency operation  ECOPACK®2 compliant component

Schottky Barrier Rectifier

FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device perfor

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：90.52 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 170V TO220 分立半导体产品 二极管 - 整流器 - 阵列

170 W, 6.0 GHz, 50V GaN HEMT Die

Description Wolfspeed’s CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

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70 MHz Bandpass SAW Filter

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170 W, 6.0 GHz, 50V GaN HEMT Die

文件：740.34 Kbytes Page：7 Pages

SI-60170-F

文件：261.279 Kbytes Page：3 Pages