Schottky Barrier Rectifier

FEATURES ·With TO-252(DPAK) packaging ·Low leakage current, low power loss, high efficiency ·High frequency operation ·High surge capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage power Schottky rectifier

Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current andforward voltage drop Avalanche specification ECOPACK® compliant component for IPAKand DPAK on demand

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：DIODE SCHOTTKY 100V 5A DPAK 分立半导体产品 二极管 - 整流器 - 单

High voltage power Schottky rectifier

Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current andforward voltage drop Avalanche specification ECOPACK® compliant component for IPAKand DPAK on demand

Automotive 100 V - 5 A power Schottky rectifier

Features • AEC-Q101 qualified • PPAP capable • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade-off between leakage current and forward voltage drop • Avalanche specification • VRRM guaranteed from -40 °C to +175 °C • ECOPACK compliant

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：69.66 Kbytes Page：5 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 100V 5A DPAK 分立半导体产品 二极管 - 整流器 - 单

Automotive high voltage power Schottky rectifier

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Switch-mode Power Rectifiers

These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB

Switch-mode Schottky Power Rectifier Surface Mount Power Package

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

SWITCHMODE Power Rectifiers

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Switch-mode Schottky Power Rectifier

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Switch-mode Schottky Power Rectifier

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