120 V power Schottky rectifier

Features • High junction temperature capability • Avalanche rated • Low leakage current • Good trade-off between leakage current and forward voltage drop • ECOPACK®2 compliant

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列

120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

120 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages