丝印代码：G22；Power Schottky diode

文件：259.99 Kbytes Page：9 Pages

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 200V 2A SMB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-221AA，SMB（直引线） 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 200V 2A SMBFLAT 分立半导体产品 二极管 - 整流器 - 单

丝印代码：FG22；Power Schottky diode

文件：259.99 Kbytes Page：9 Pages

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr