丝印代码：STPS2045CG；Power Schottky rectifier

Features  Very small conduction losses  Negligible switching losses  Extremely fast switching  Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine  Avalanche rated  ECOPACK®2 compliant component for D²PAK on demand

POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged either in TO-220AB, TO-220FPAB, or D²PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protectio

POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged either in TO-220AB, TO-220FPAB, or D²PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protectio

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Barrier Rectifier

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POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged either in TO-220AB, TO-220FPAB, or D²PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protectio

POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged either in TO-220AB, TO-220FPAB, or D²PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protectio

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara