Schottky Barrier Rectifier

FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. MECHANICAL CHARACTERISTICS ·Low Voltage High

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tab Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Package in DPAK, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 30V DPAK 分立半导体产品 二极管 - 整流器 - 阵列

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tab Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Package in DPAK, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 30V DPAK 分立半导体产品 二极管 - 整流器 - 阵列

Low drop power Schottky rectifier

Description Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters. Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications. Features  Very small

MOS GATED BARRIER RECTIFIER

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15A 30V MOS Schottky Rectifier

文件：724.95 Kbytes Page：5 Pages

Low drop power Schottky rectifier

文件：118.03 Kbytes Page：7 Pages