位置：首页 > IC中文资料第1227页 > STP9NB60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP9NB60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9 A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP9NB60 | N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | |
STP9NB60 | N-Channel 650V (D-S) Power MOSFET 文件：1.10766 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.2 A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10564 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10783 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
STP9NB60产品属性
- 类型
描述
- 型号
STP9NB60
- 功能描述
MOSFET N-CH 600V 9A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3400 |
原厂直销,现货供应,账期支持! |
|||
ST |
NEW |
TO-220 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
24+ |
N/A |
3540 |
||||
ST |
17+ |
TO-220F |
6200 |
||||
ST |
25+ |
TO-220 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
ST |
24+ |
TO-220F |
1000 |
原装现货热卖 |
|||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
1531+ |
TO-220F |
13 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
STP9NB60规格书下载地址
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STP9NB60数据表相关新闻
STPA003OD-4WX
STPA003OD-4WX
2023-9-14STP90NF03L
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-18STP90NF03L原装现货
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