N-channel600V-0.56廓-7A-TO-220-TO-220FP-IPAK-DPAKsecondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementssecondgenerationMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK

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iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

N-channel600V,0.59,7A,FDmeshIIPowerMOSFET

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody

N-Channel650V(D-S)PowerMOSFET

文件：1.10767 Mbytes Page：10 Pages

8.0A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC8NM60isahighvoltagesuperjunctionMOSFET andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceandhave ahighruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedathighspeedswitching

N-channel650V@Tjmax,0.9Ω,8AMDmesh™PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

Description TheMDmesh™isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH™ horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

N-Channel650V(D-S)PowerMOSFET

文件：1.10575 Mbytes Page：10 Pages

N-Channel650V(D-S)PowerMOSFET

文件：1.10714 Mbytes Page：10 Pages

N-Channel650V(D-S)PowerMOSFET

文件：1.10581 Mbytes Page：10 Pages