N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

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N-CHANNEL 650V @Tjmax - 1.2廓 - 5A TO-220/FP/DPAK Zener-Protected SuperMESH??MOSFET

文件：494.13 Kbytes Page：14 Pages

N沟道600 V、1.2 Ohm典型值、5 A SuperMESH功率MOSFET，TO-220封装

N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

文件：585.41 Kbytes Page：12 Pages

N-CHANNEL 650V @Tjmax - 1.2廓 - 5A TO-220/FP/DPAK Zener-Protected SuperMESH??MOSFET

文件：494.13 Kbytes Page：14 Pages

N-Channel 650V (D-S) Super Junction Power MOSFET

文件：1.17281 Mbytes Page：11 Pages

N-CHANNEL 650V @Tjmax - 1.2廓 - 5A TO-220/FP/DPAK Zener-Protected SuperMESH??MOSFET

文件：494.13 Kbytes Page：14 Pages

N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

文件：585.41 Kbytes Page：12 Pages

N沟道600 V、1.2 Ohm典型值、5 A SuperMESH功率MOSFET，TO-220FP封装

N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

文件：585.41 Kbytes Page：12 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.43515 Mbytes Page：5 Pages