N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.1A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 800 V, 1.50(ohm) typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET，TO-220封装

Fast Switching Speed

DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier

5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-A

5A, 800V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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800V N-Channel MOSFET -T

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