isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 69mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

N沟道250 V、0.055 Ohm、45 A、TO-220低栅极电荷StripFET(TM) 功率MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize on-resistance and gate charge. It is therefore suitable as primary side swich allowing high efficiencies. • 100% avalanche tested \n• Low intrinsic capacitances \n• Gate charge minimized;

N-channel 250V - 0.055廓 - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET

文件：342.05 Kbytes Page：14 Pages

N-channel 250V - 0.055廓 - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET

文件：342.05 Kbytes Page：14 Pages