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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP50NE10L | N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema | STMICROELECTRONICS 意法半导体 |   | |
STP50NE10L | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 100V - 0.021??- 50A TO-220 STripFET??Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-channel 100V - 0.021廓 - 50A - D2PAK STripFET??Power MOSFET 文件：412.37 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
STP50NE10L产品属性
- 类型
描述
- 型号
STP50NE10L
- 功能描述
MOSFET N-Ch 100 Volt 50 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
13199 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST品牌 |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
ST |
22+ |
TO220ISOFULLPACK |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
ST |
25+23+ |
TO-220 |
30471 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
TO-220 |
2500 |
原装现货热卖 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST/意法 |
23+ |
TO-220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
17+ |
TO-220 |
6200 |
||||
ST |
24+ |
N/A |
2286 |
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STP50NE10L规格书下载地址
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DdatasheetPDF页码索引
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