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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP50NE08 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 |   | |
STP50NE08 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | |
STP50NE08产品属性
- 类型
描述
- 型号
STP50NE08
- 功能描述
MOSFET N-Ch 80 Volt 50 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
26050 |
原厂直销,现货供应,账期支持! |
|||
VBsemi |
21+ |
TO220 |
10010 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST |
24+ |
TO-220 |
2500 |
原装现货热卖 |
|||
ST |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
ST |
新 |
647 |
全新原装 货期两周 |
||||
VBSEMI |
19+ |
TO-220-3L |
12000 |
||||
ST |
17+ |
TO-220 |
6200 |
||||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
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STP50NE08规格书下载地址
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DdatasheetPDF页码索引
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