型号 功能描述 生产厂家 企业 LOGO 操作
STP4NM60

N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

STMICROELECTRONICS

意法半导体

STP4NM60

N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

STMICROELECTRONICS

意法半导体

STP4NM60

N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

文件:711.43 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

文件:711.43 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

文件:711.43 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

STP4NM60产品属性

  • 类型

    描述

  • 型号

    STP4NM60

  • 功能描述

    MOSFET N-Ch 600 Volt 3.0Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-29 17:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
NEW
TO-220
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST/意法
24+
TO-220
990000
明嘉莱只做原装正品现货
ST
TO-220
56520
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
TO-220
16900
正规渠道,只有原装!
ST
25+
TO-220
16900
原装,请咨询
ST/意法
24+
TO220
22055
郑重承诺只做原装进口现货
ST
17+
TO-220
6200
ST
24+
N/A
4500
ST
06+
TO-220
10000
自己公司全新库存绝对有货
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票

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