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STP4NC60FP

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

STMICROELECTRONICS

意法半导体

STP4NC60FP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

STP4NC60FP产品属性

  • 类型

    描述

  • 型号

    STP4NC60FP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET

更新时间:2026-3-17 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2016+
TO-220F
3500
只做原装,假一罚十,公司可开17%增值税发票!
STP4NC60FP
25+
10299
10299
ST
20+
TO-220F
38560
原装优势主营型号-可开原型号增税票
ST
23+
TO-220F
10000
专做原装正品,假一罚百!
ST
04+
TO-220F
30268
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
25+
TO-220F
2987
只售原装自家现货!诚信经营!欢迎来电!
原厂
2540+
TO-220F
6852
只做原装正品假一赔十为客户做到零风险!!
STM
25+
TO-220
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
24+
TO-220F
2500
原装现货热卖
ST/意法
22+
TO-220FP
3000
原装正品,支持实单

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