Automotive-grade N-channel 40 V, 1.5 m typ., 180 A STripFETTM F7 Power MOSFET in a TO-220 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology w

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 180 A STripFET F7 in a TO-220 package

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gatestructure that results in very low on-state resistance, while also reducing internalcapacitance and gate charge for faster and more efficient switching.\n • Designed for automotive applications and AEC-Q101 qualified\n• Among the lowest RDS(on) on the market\n• Excellent FoM (figure of merit)• Low Crss/Ciss ratio for EMI immunity\n• High avalanche ruggedness;

封装/外壳：TO-220-3 包装：卷带（TR） 描述：MOSFET N-CHANNEL 40V 180A TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个

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