isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 32mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-CHANNEL 120V - 0.028 Ohm 40A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET

• Exceptional dv/dt capability\n• Application oriented characterization• 100% avalanche tested;