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STP3NK90Z价格
参考价格：￥2.1943
型号：STP3NK90Z 品牌：STMICROELECTRONICS 备注：这里有STP3NK90Z多少钱，2026年最近7天走势，今日出价，今日竞价，STP3NK90Z批发/采购报价，STP3NK90Z行情走势销售排行榜，STP3NK90Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP3NK90Z | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 |   | |
STP3NK90Z | N-channel 900 V, 4.1 廓 typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | |
STP3NK90Z | N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure | STMICROELECTRONICS 意法半导体 | | |
STP3NK90Z | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP3NK90Z | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.8Ω(Max)@VGS= 10V DAPPLICATION · Switching Applications | ISC 无锡固电 | | |
STP3NK90Z | N沟道900 V、4.1 Ohm典型值、3 A SuperMESH功率MOSFET，TO-220封装 | STMICROELECTRONICS 意法半导体 | | |
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure | STMICROELECTRONICS 意法半导体 | | ||
N-channel 900 V, 4.1 廓 typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N沟道900 V、4.1 Ohm典型值、3 A SuperMESH功率MOSFET，TO-220FP封装 | STMICROELECTRONICS 意法半导体 | | ||
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | |
STP3NK90Z产品属性
- 类型
描述
- 型号
STP3NK90Z
- 功能描述
MOSFET N-Ch 900 Volt 3 Amp Zener SuperMESH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
2021+ |
Through Hole |
7600 |
原装现货，欢迎询价 |
|||
ST/意法 |
2021+ |
TO-220-3 |
9000 |
原装现货,随时欢迎询价 |
|||
ST |
17+ |
TO-220 |
1350 |
只做原装正品 |
|||
STMICRO |
25+ |
N/A |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
24+ |
TO-220 |
1250 |
原装现货热卖 |
|||
ST/意法 |
23+ |
TO-220 |
8215 |
原厂原装 |
|||
ST |
23+/24+ |
TO-220F |
9865 |
原包原标签100%进口原装可开13%税 |
STP3NK90Z规格书下载地址
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DdatasheetPDF页码索引
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