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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP3NA80 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
STP3NA80 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3.1A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP3NA80 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
800V N-Channel MOSFET Features RDS(ON), VGS@10V,ID@1.5A | PANJIT 強茂 | | ||
800V N-Channel MOSFET Features RDS(ON), VGS@10V,ID@1.5A | PANJIT 強茂 | | ||
800V N-Channel MOSFET 文件：467.98 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
800V N-Channel MOSFET 文件：467.98 Kbytes Page：8 Pages | PANJIT 強茂 | |
STP3NA80产品属性
- 类型
描述
- 型号
STP3NA80
- 功能描述
MOSFET REORD 511-STP3NB80 TO-220 N-CH 800V 3.1
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
TO |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
05+ |
TO-220 |
10000 |
自己公司全新库存绝对有货 |
|||
ST |
25+ |
TO-TO-220F |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST |
24+ |
N/A |
5400 |
||||
ST |
2016+ |
TO-220 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
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STP3NA80规格书下载地址
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DdatasheetPDF页码索引
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