STP36NF06价格
参考价格：￥1.3461
型号：STP36NF06 品牌：STMICROELECTRONICS 备注：这里有STP36NF06多少钱，2026年最近7天走势，今日出价，今日竞价，STP36NF06批发/采购报价，STP36NF06行情走势销售排行榜，STP36NF06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP36NF06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP36NF06 | 丝印代码：P36NF06；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | |
STP36NF06 | N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | |
STP36NF06 | N-Channel 60 V (D-S) MOSFET 文件：1.31581 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
STP36NF06 | N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET | STMICROELECTRONICS 意法半导体 | | |
丝印代码：P36NF06；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N沟道60V - 0.032 Ohm - 30A TO-220 STRIPFET(TM) II MOSFET This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufact • Exceptional dv/dt capability \n• Low threshold drive \n• 100% avalanche tested; | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31583 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | |
STP36NF06产品属性
- 类型
描述
- Package：
TO-220AB
- Grade：
Automotive
- VDSS(V)：
60
- RDS(on)_max(@ 4.5/5V)(Ω)：
0.05
- RDS(on)_max(@ VGS=10V)(Ω)：
0.04
- Drain Current (Dc)_max(A)：
30
- PTOT_max(W)：
70
- Qg_typ(nC)：
12
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
26+ |
QFP |
99680 |
只做原装,欢迎来电资询 |
|||
SAMSUNG/三星 |
26+ |
QFP |
20000 |
公司只有正品,实单来谈 |
|||
SAMSUNG/三星 |
22+ |
QFP-256 |
3000 |
原装正品,支持实单 |
|||
SAMSUNG |
24+ |
QFP |
153 |
||||
HPMASKING |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SANKEN/三垦 |
2450+ |
TO3P-5 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST/意法 |
25+ |
TO220 |
32360 |
ST/意法全新特价STP36NF06L即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
20+ |
QFP208 |
500 |
样品可出,优势库存欢迎实单 |
|||
ST/意法 |
1448+ |
TO-220 |
5 |
原装正品 可含税交易 |
|||
ST专家 |
2021+ |
TO-220 |
6800 |
原厂原装,欢迎咨询 |
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