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STP36NF06价格
参考价格：￥1.3461
型号：STP36NF06 品牌：STMICROELECTRONICS 备注：这里有STP36NF06多少钱，2025年最近7天走势，今日出价，今日竞价，STP36NF06批发/采购报价，STP36NF06行情走势销售排行榜，STP36NF06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP36NF06 | N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 |   | |
STP36NF06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP36NF06 | N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET | STMICROELECTRONICS 意法半导体 | | |
STP36NF06 | N-Channel 60 V (D-S) MOSFET 文件：1.31581 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
STP36NF06 | N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | |
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31583 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N沟道60V - 0.032 Ohm - 30A TO-220 STRIPFET(TM) II MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 文件：336.79 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | |
STP36NF06产品属性
- 类型
描述
- 型号
STP36NF06
- 功能描述
MOSFET N-Ch 60 Volt 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2517+ |
TO220 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
09+ |
TO-220 |
750 |
只做原装正品 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
23+ |
N/A |
20000 |
||||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
25+ |
TO220 |
32360 |
ST/意法全新特价STP36NF06L即刻询购立享优惠#长期有货 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
23+ |
TO-220 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
ST/意法 |
25+ |
TO-220 |
12500 |
只做进口原装假一罚百 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原厂原装，价格优势，欢迎洽谈！ |
STP36NF06规格书下载地址
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DdatasheetPDF页码索引
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