N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.033 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION OR

Trans MOSFET N-CH 60V 36A 3-Pin(3+Tab) TO-220

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.033 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION OR

N-Channel Enhancement

InPower Product Lines

TMOS POWER FET 36 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

Fast Switching

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N-Channel 6 0-V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

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