N沟道650 V、0.117 Ohm典型值、24 A MDmesh M2功率MOSFET，TO-220封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

isc N-Channel MOSFET Transistor

文件：304.81 Kbytes Page：2 Pages

丝印代码：33N65M2；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes Page：23 Pages

丝印代码：33N65M2；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes Page：23 Pages

丝印代码：33N65M2；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes Page：23 Pages

丝印代码：33N65M2；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes Page：23 Pages

N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

文件：815.69 Kbytes Page：15 Pages