N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

N沟道900 V、5 Ohm典型值、2.1 A SuperMESH功率MOSFET，TO-220封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET

文件：604.55 Kbytes Page：18 Pages

N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

N-Channel MOSFET uses advanced trench technology

文件：834.39 Kbytes Page：5 Pages

N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET

文件：604.55 Kbytes Page：18 Pages