Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Applications • Switchin

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 100 V, 0.027 Ohm typ., 25 A STripFET F7 Power MOSFET in TO-220 package

N-Channel 100-V (D-S) MOSFET

文件：951.68 Kbytes Page：7 Pages

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Applications • Switchin

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Applications • Switchin

N-Channel 100-V (D-S) MOSFET

文件：983.97 Kbytes Page：8 Pages

N-Channel 100-V (D-S) MOSFET

文件：985 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：323.93 Kbytes Page：2 Pages