位置：首页 > IC中文资料第5870页 > STP13N10LFI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Applications: ● Li-Battery Management System ● USB Power Delivery ● BLDC Drive ● Synchronous Rectifica | ADV 爱德微 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel 100-V (D-S) MOSFET 文件：773.51 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：354.05 Kbytes Page：4 Pages | CET 华瑞 | |
STP13N10LFI产品属性
- 类型
描述
- 型号
STP13N10LFI
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
24+ |
50000 |
|||||
CET/華瑞 |
2407+ |
con |
10750 |
只有原装!量大可以订!一片起卖! |
|||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
CET(华瑞) |
2447 |
TO-263 |
105000 |
10个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET-MOS |
10 |
||||||
CET |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
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STP13N10LFI规格书下载地址
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