型号 功能描述 生产厂家 企业 LOGO 操作
STP11NM60FDFP

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

STP11NM60FDFP

isc N-Channel Mosfet Transistor

文件:309.16 Kbytes Page:2 Pages

ISC

无锡固电

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.032609 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件:357.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STP11NM60FDFP产品属性

  • 类型

    描述

  • 型号

    STP11NM60FDFP

  • 功能描述

    MOSFET N-Ch 600 Volt 11 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-28 15:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
TO-220FP
9800
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST/意法半导体
24+
TO-220FP-3
6000
全新原装深圳仓库现货有单必成
ST/意法半导体
25+
TO-220FP-3
4650
绝对原装公司现货
ST/意法
2026+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
ST
24+
TO-220FP
3000
全新原装环保现货
ST/意法半导体
26+
TO-220FP-3
60000
只有原装 可配单
ST
24+
TO-220-3
1592
ST/意法半导体
21+
TO-220FP-3
8860
只做原装,质量保证
ST/意法半导体
24+
TO-220FP-3
10000
十年沉淀唯有原装
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!

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