STP10NK80Z价格

参考价格:¥5.1151

型号:STP10NK80Z 品牌:STMicroelectronics 备注:这里有STP10NK80Z多少钱,2025年最近7天走势,今日出价,今日竞价,STP10NK80Z批发/采购报价,STP10NK80Z行情走势销售排行榜,STP10NK80Z报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STP10NK80Z

N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

STMICROELECTRONICS

意法半导体

STP10NK80Z

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

STMICROELECTRONICS

意法半导体

STP10NK80Z

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件:452.12 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

STMICROELECTRONICS

意法半导体

N-Channel Super Junction MOSFET

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply(SMPS) ·Power Factor Correction(PFC) ·TV Power & LED lighting Power ·AC to DC Converters

ISC

无锡固电

N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件:452.12 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件:452.12 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件:452.12 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

STP10NK80Z产品属性

  • 类型

    描述

  • 型号

    STP10NK80Z

  • 功能描述

    MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-17 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2301+
TO-220F
10000
全新、原装
ST/意法半导体
21+
TO-220-3
8860
原装现货,实单价优
ST(意法)
24+
TO-220FP
7078
原厂可订货,技术支持,直接渠道。可签保供合同
ST/意法半导体
21+
TO-220-3
8860
只做原装,质量保证
ST
24+
原厂原封
6523
进口原装公司百分百现货可出样品
ST/意法
2410+
TO-220F
2015
原装正品.假一赔百.正规渠道.原厂追溯.
ST(意法半导体)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
ST/意法
23+
NA
12730
原装正品代理渠道价格优势
ST/进口原
17+
TO-220
6200
ST
24+
TO-220-3
1158

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