Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 7.5A 23 @ VGS=10V 35 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -6.0A 35 @ VGS=-10V 55 @ VGS=-4.5V

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 6.5A 31 @ VGS=10V 42 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -6A 35 @ VGS=-10V 53 @ VGS=-4.5V

Mosfets

P-Chanel and N-Channel MOSFET use advanced trench technology

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Mosfets

Dual High Voltage, Low Noise EL Lamp Driver

General Description The Supertex HV832 is a high voltage driver designed for driving two EL lamps with a combined area of 3.5 square inches. The input supply voltage range is from 2.0V to 5.0V. The device is designed to reduce the amount of audible noise emitted by the lamp. The device uses a sin

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

Integrated Circuit Tone Decoder

Description: The NTE832 and NTE832SM are general purpose tone decoders designed to provide a saturated transistor switch to GND when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage controlled oscillator which determines the c

Integrated Circuit Tone Decoder

Description: The NTE832 and NTE832SM are general purpose tone decoders designed to provide a saturated transistor switch to GND when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage controlled oscillator which determines the c