Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 7.5A 23 @ VGS=10V 35 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -6.0A 35 @ VGS=-10V 55 @ VGS=-4.5V

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 6.5A 31 @ VGS=10V 42 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -6A 35 @ VGS=-10V 53 @ VGS=-4.5V

Mosfets

Mosfets

P-Chanel and N-Channel MOSFET use advanced trench technology

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Heavy duty 30A general purpose Power Relays.

Features Heavy duty 30A general purpose Power Relays. UL/CUL (UL 508 & 873), VDE safety approvals. Optional for open frame, dust cover, sealed type and with and without quick terminal on top, etc. High insulation type & high dielectric strength type available. Contact gap to 2.0mm, hig

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Heavy duty 30A general purpose Power Relays.

Features Heavy duty 30A general purpose Power Relays. UL/CUL (UL 508 & 873), VDE safety approvals. Optional for open frame, dust cover, sealed type and with and without quick terminal on top, etc. High insulation type & high dielectric strength type available. Contact gap to 2.0mm, hig

Pérmanent Magnets

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