Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 5.3A 46 @ VGS=10V 65 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -4.7A 56 @ VGS=-10V 90 @ VGS=-4.5V

Mosfets

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Gain Block Amplifier

DESCRIPTION The TriQuint TGA8300 - SCC is a GaAs monolithic distributed amplifier designed for use as a multioctave general - purpose gain block. Four 189 - µm gate width FETs provide 7.5 -dB nominal gain and 5.5- dB noise figure from 2 to 18- GHz. Typical power output is 20 - dBm at 1-dB gain co

MOTOR DRIVER FOR CAMERA

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