P -Channel Enhancement Mode MOS FET

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

Mosfets

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

Mosfets

P-Channel MOSFET uses advanced trench technology

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P-Channel MOSFET

■ Features ● VDS (V) =-12V ● ID =-11 A (VGS =-4.5V) ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4437 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets RO

DELAY MODULES,TTL,SURFACE MOUNTED

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P-Channel 30-V (D-S) MOSFET

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12V P-Channel MOSFET

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