N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) -RDS(on) = 18mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in I2PAK package

isc N-Channel MOSFET Transistor

文件：358.4 Kbytes Page：2 Pages

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

N-Channel MOSFET uses advanced SGT technology

文件：1.64749 Mbytes Page：5 Pages

isc N-Channel MOSFET Transistor

文件：324.57 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：310.95 Kbytes Page：2 Pages

Ultra low on-resistance

文件：820.94 Kbytes Page：13 Pages