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STI26NM60N价格
参考价格：￥21.1755
型号：STI26NM60N 品牌：STMicroelectronics 备注：这里有STI26NM60N多少钱，2025年最近7天走势，今日出价，今日竞价，STI26NM60N批发/采购报价，STI26NM60N行情走势销售排行榜，STI26NM60N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STI26NM60N | N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STI26NM60N | iscN-ChannelMOSFETTransistor 文件：358.69 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STI26NM60N产品属性
- 类型
描述
- 型号
STI26NM60N
- 功能描述
MOSFET N-CH 600V 20A I2PAK
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
Mdmesh™ II
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST全系列 |
25+23+ |
I2PAK |
26496 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
TO2623 Long Leads I2Pak TO262A |
8000 |
只做原装现货 |
|||
ST/意法 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
ST(意法) |
23+ |
15000 |
专业帮助客户找货 配单,诚信可靠! |
||||
STM原厂目录 |
24+ |
I2PAK |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
ST |
21+ |
I2PAK |
23480 |
||||
ST |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
24+ |
NA/ |
17 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST(意法半导体) |
24+ |
I2PAK |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
STMicroelectronics |
21+ |
I2PAK |
3000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
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