N-channel 600 V, 162 m typ., 17 A, MDmesh™ M6 Power MOSFET in an I²PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：MOSFET N-CH 600V I2PAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel MOSFET

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.19Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

N-channel 600 V, 162 m typ., 17 A, MDmeshTM M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N-channel 600 V, 0.175 typ., 15 A, MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D짼PAK

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