High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ STI13005-

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 3A TO251 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 400V 3A IPAK

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

High voltage fast-switching NPN power transistor

文件：207.88 Kbytes Page：11 Pages