丝印代码：100N10F7；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

Single-chip worldwide iDTV processor

Description The STi1010 is a highly-integrated, high-performance system-on-chip iDTV processor compliant with worldwide digital TV standards such as ATSC (US), DVB (Europe), ARIB (Japan), DMB-TH (China) and PAL/SECAM/NTSC analog TV standards. The STi1010 provides a cost-optimized solution for iD

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

丝印代码：10NM60N；N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package

Features • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET

Dual / Bipolar Transistors

Synthetic Test Systems

Synthetic Test Systems

文件：209.99 Kbytes Page：4 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：MOSFET N-CH 100V 80A I2PAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?

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