Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving sou

Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

Automotive-grade N-channel 650 V, 89 m typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package

Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This

Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is