High Industrial Performance (HIPak) Solid-State Relays

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D-Band Spectrum Analyzer Harmonic Mixer, Common LO/IF Port

Description: Model STH-06SF-S1 is a D Band harmonic mixer employing single diode and broadband circuitry to deliver low conversion loss and continuous frequency coverage for full waveguide band operations covering the frequency range of 110 to 170 GHz. The mixer extends the operation frequency of

F-Band Spectrum Analyzer Harmonic Mixer, Common LO/IF Port

Description: Model STH-08SF-S1 is a F Band harmonic mixer employing single diode and broadband circuitry to deliver low conversion loss and continuous frequency coverage for full waveguide band operations covering the frequency range of 90 to 140 GHz. The mixer extends the operation frequency of

NPN Plastic Power Transistor

NPN Plastic Power Transistor Low frequency power amplifier

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS N-channel High Injection POWER MOS transis- tors (IGBT) which features a high impedance in- sulated gate input and a low on-resistance characteristi

Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. Th

Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

fast power mos transistor

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

fast power mos transistor

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

fast power mos transistor

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high

N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages

Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Features ■ Ultra low on-resistance ■ 100 avala

Automotive-grade N-channel 1200 V, 0.62 typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovati

N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.54Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal ca

nullN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.34 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ REDUCED GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, C

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ AVALANCHE RUGGEDNESS TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 4000V DC APPLICATIONS ■HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER RE

nullN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.34 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ REDUCED GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, C

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ AVALANCHE RUGGEDNESS TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 4000V DC APPLICATIONS ■HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER RE

nullN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.34 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ REDUCED GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, C

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS

N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH M

N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS

N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH M

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

2Megapixel Full HD 32x Network Zoom Camera

Key Features • Max. 2M (1920 x 1080) resolution • 16 : 9 Full HD (1080p) resolution support • 0.15Lux@F1.6 (Color), 0.015Lux@F1.6 (B/W) • 4.44 ~ 142.6mm (32x) optical zoom, 16x digital zoom • H.264, MJPEG dual codec, Multiple streaming • Day & Night (ICR), WDR (120dB) • Intelligent video an

N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET

Features • Best-in-class SOA capability • High current surge capability • Extremely low on-resistance Applications • Hot-swap • Electronic fuse • Load switch • In-rush current limiter Description This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gat

N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET

Features ■ Ultra low on-resistance ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching perf

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.4mΩ(Max)@VGS= 10V APPLICATIONS · Switching applications

N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced tren

N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced tren

N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H짼PAK-2 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ru

N-Channel Power MOSFET

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4mΩ(Max)@VGS= 10V APPLICATIONS ·Switching applications ·Power tools ·Motor control

Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power

Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vert

Automotive-grade N-channel 24 V, 0.95 typ., 180 A

Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Features • Designed for automotive applications

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP