Low thermal resistance

文件：1.47608 Mbytes Page：18 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 120A 469W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

Features AEC-Q101 qualified Maximum junction temperature: TJ = 175 °C High-speed switching series Minimized tail current VCE(sat) = 1.65 V (typ.) @ IC = 80 A Tight parameters distribution Safer paralleling Low thermal resistance Applications PFC High frequency converters Descriptio

Tight parameter distribution

文件：908.74 Kbytes Page：17 Pages

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

文件：1.46448 Mbytes Page：22 Pages

High speed switching series

文件：978.33 Kbytes Page：18 Pages

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

文件：1.46448 Mbytes Page：22 Pages

Low thermal resistance

文件：1.47608 Mbytes Page：18 Pages