型号 功能描述 生产厂家 企业 LOGO 操作
STGWA60V60DWFAG

Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tail-less switching current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recover

STMICROELECTRONICS

意法半导体

STGWA60V60DWFAG

封装/外壳:TO-247-3 包装:管件 描述:AUTOMOTIVE-GRADE TRENCH FIELD-ST 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

STGWA60V60DWFAG

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

文件:1.7345 Mbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
TO247
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
2526+
原厂封装
39
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST/意法
25+
TO-247
880000
明嘉莱只做原装正品现货
ST
25+
TO-247
5000
原厂原装,价格优势
ST
22+
TO-247
24000
绝对真实库存 原装正品
ST/意法
22+
TO247
9000
原装正品,支持实单!
ST/意法
24+
NA
14280
强势渠道订货 7-10天

STGWA60V60DWFAG芯片相关品牌

STGWA60V60DWFAG数据表相关新闻