Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tail-less switching current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recover

封装/外壳：TO-247-3 包装：管件 描述：AUTOMOTIVE-GRADE TRENCH FIELD-ST 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

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