Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT BIPO 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600 V、60 A超高速沟槽栅场截止IGBT

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

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