STGWA45HF60WDI价格

参考价格:¥19.6466

型号:STGWA45HF60WDI 品牌:STMicroelectronics 备注:这里有STGWA45HF60WDI多少钱,2025年最近7天走势,今日出价,今日竞价,STGWA45HF60WDI批发/采购报价,STGWA45HF60WDI行情走势销售排行榜,STGWA45HF60WDI报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STGWA45HF60WDI

45 A, 600 V ultra fast IGBT with low drop diode

Description The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Features ■ Impro

STMICROELECTRONICS

意法半导体

STGWA45HF60WDI

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 80A 310W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

45 A, 600 V ultra fast IGBT with low drop diode

Description The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Features ■ Impro

STMICROELECTRONICS

意法半导体

45 A, 600 V ultra fast IGBT

文件:468.02 Kbytes Page:12 Pages

STMICROELECTRONICS

意法半导体

45 A, 600 V ultra fast IGBT

文件:468.02 Kbytes Page:12 Pages

STMICROELECTRONICS

意法半导体

STGWA45HF60WDI产品属性

  • 类型

    描述

  • 型号

    STGWA45HF60WDI

  • 功能描述

    IGBT 晶体管 45A 600V Ultra Fast IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-2 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-247
180
正规渠道,只有原装!
ST
24+
TO-247
5000
全新原装正品,现货销售
ST
23+
TO-247
20000
SST
原厂封装
9800
原装进口公司现货假一赔百
ST/意法
22+
TO-247
9000
原装正品,支持实单!
ST(意法)
25+
-
500000
源自原厂成本,高价回收工厂呆滞
ST
23+
TO2473
8000
只做原装现货
ST/意法
2410+
TO-247
17000
原装正品.假一赔百.正规渠道.原厂追溯.
ST
24+
TO-247
16500
只做原装正品现货 假一赔十
ST/意法
1123+
TO247
2516
原装现货

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