High speed switching series

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封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH 650V 80A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRENCH GATE FIELD-STOP 650 V 40 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：975.07 Kbytes Page：17 Pages

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：975.07 Kbytes Page：17 Pages

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：1.08307 Mbytes Page：21 Pages

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

文件：1.08307 Mbytes Page：21 Pages