Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequenc

封装/外壳：TO-247-3 包装：管件 描述：TRENCH GATE IGBT TO247 PKG 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200 V、40 A高速沟槽栅场截止H系列IGBT

Trench gate Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.1V@IC=40A ·High Current Capability ·High Input Impedance ·Very fast recovery antiparallel diode APPLICATIONS ·Uninterruptible power supply ·Welding machines ·Photovoltaic inverters ·High frequency converters

Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequenc