Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

封装/外壳：TO-220-3 包装：管件 描述：TRENCH GATE FIELD-STOP IGBT, HB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

文件：385.31 Kbytes Page：2 Pages

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：153.68 Kbytes Page：7 Pages

Fast Recovery Diode

文件：647.56 Kbytes Page：5 Pages