STGP20NC60V价格

参考价格:¥9.3427

型号:STGP20NC60V 品牌:STMICROELECTRONICS 备注:这里有STGP20NC60V多少钱,2025年最近7天走势,今日出价,今日竞价,STGP20NC60V批发/采购报价,STGP20NC60V行情走势销售排行榜,STGP20NC60V报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STGP20NC60V

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

STMICROELECTRONICS

意法半导体

STGP20NC60V

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 60A 200W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

STGP20NC60V

N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT

文件:293.18 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

STGP20NC60V

30 A - 600 V - very fast IGBT

文件:407.05 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

STMICROELECTRONICS

意法半导体

N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications. General Features

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

文件:407.05 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STGP20NC60V产品属性

  • 类型

    描述

  • 型号

    STGP20NC60V

  • 功能描述

    IGBT 晶体管 N-Ch 600 Volt 30 Amp

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-14 18:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
1926+
TO-220AB
6852
只做原装正品现货!或订货假一赔十!
STM
22+23+
TO220
8000
新到现货,只做原装进口
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST
23+
TO-220
8795
ST
22+
TO220ABNONISOL
25000
只做原装进口现货,专注配单
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST(意法半导体)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ST
21+
TO-220
6880
只做原装,质量保证
ST/意法
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
STM
24+
TO-220
11000
原装正品 有挂有货 假一赔十

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